Imec announced that it has developed 200V and 650V normally-off/enhancement mode (e-mode) on 200mm/8-inch GaN-on-Silicon wafers, achieving a very low dynamic Ron dispersion (below 20%) and state-of-the-art performance and reproducibility. Stress tests have also shown a good device reliability. Imec’s technology is ready for prototyping, customized low-volume production as well as for technology transfer.   GaN technology offers faster switching power devices with higher breakdown voltage and l...